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Method for forming low-k hard film
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编号 AM00206214
交易方式 面谈
地区: 中国
领域: 汽车零件
作    者 HYODO YASUYOSHI; FUKAZAWA ATSUKI; MORISADA YOSHINORI; YAMAGUCHI MASASHI; MATSUKI NOBUO 日    期 2004-02-26
申  请  人 ASM JAPAN 分    类 专利
专利状态 已授予 授权号 US2004038514A1
技术成熟度 详细设计 依存度 独立应用
A hard film is formed on an insulation film formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and optionally an additive gas such as alcohol to a reaction space of a plasma CVD apparatus, and applying low-frequency RF power and high-frequency RF power. The silicon-containing hydrocarbon compound includes a cyclic Si-containing hydrocarbon compound and/or a linear Si-containing hydrocarbon compound, as a basal structure, with reactive groups for form oligomers using the basal structure. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant.
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