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Insulation film on semiconductor substrate and method for forming same
汽车零件
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编号 AM00206213
交易方式 面谈
地区: 中国
领域: 汽车零件
作    者 MATSUKI NOBUO; MORISADA YOSHINORI; HYODO YASUYOSHI; UMEMOTO SEIJIRO 日    期 2003-12-04
申  请  人 ASM JAPAN 分    类 专利
专利状态 已授予 授权号 US2003224622A1
技术成熟度 详细设计 依存度 独立应用
An insulation film is formed on a semiconductor substrate by vaporizing a silicon-containing hydrocarbon compound to provide a source gas, introducing a reaction gas composed of the source gas and an additive gas such as an inert gas and oxidizing gas to a reaction space of a plasma CVD apparatus, and depositing a siloxan polymer film by plasma polymerization at a temperature of -50° C.-100° C. The residence time of the reaction gas in the reaction space is lengthened by reducing the total flow of the reaction gas in such a way as to form a siloxan polymer film with a low dielectric constant such as 2.5.
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